Influence of annealing time on structural and electrical properties of Sb doped SnO2 films
Nanocrystalline 14 at % Sb-doped SnO2 films have been synthesized by a sol-gel method, to use them as solar cells electrodes. In this paper, we present a study of the annealing time of the films versus the increase of the particle size (varying from 6 nm to 19 nm) established by Scherer’s equation. We have also followed electrical resistance evolution with annealing temperature and time. An optimum value of 222 Ω/ ; was measured on a sample annealed at 500 °C for 2 h. The crystalline structure of the films was characterized and phases identified by X ray diffraction in grazing incidence. Their thickness has been measured by spectroscopic ellipsometry around 200 nm.
Document joint
Auteur(s)
Adnani H.
Amardjia H.
Canut B.
Hemissi M.
Pelletier J.M.
Articles de cet auteur
- Elaboration et étude des couches minces de SnO2 obtenu par évaporation sous vide et recuites sous oxygène
- [...]
Plenet J.
Mots-clés
- Electrical properties
- Nanocrystal
- Nanostructure
- Photovoltaic device
- Sb
- SnO2
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Solar cell
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- Investigation on chemical bath deposited CdS thin films
- Thickness optimization of various layers of CZTS solar cell
- The Effect of Ground albedo on the Performance GaInP and (a-Si : H) of Solar Cells
- Simulation study of InGaN/GaN multiple quantum well solar cells
- Influence of interfacial oxide layer thickness on conversion efficiency of SnO2/SiO2/Si(N) Solar Cells
- X ray diffraction
fr
Science et Technologie
Revue des Energies Renouvelables
Volume 10
Numéro 02
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