Characterization of CuInSe2 thin films elaborated by electrochemical deposition

In this paper, we report the elaboration and characterization of CuInSe2 thin films
prepared by electrochemical deposition technique. The thin films were deposited at room
temperature using two electrodes cell configuration, then they annealed under argon atmosphere at
300 °C for 30 and 45 mn. The structural and optical properties of the films were characterized
respectively by means of X-ray diffraction and transmission spectrophotometer measurements. The
band gap of the samples was estimated using optical transmittance. All elaborated films show the
tetragonal chalcopyrite CuInSe2 with preferential orientation (112) plan. X- ray diffraction and
calculation of grain size of the films show that the film annealed at 300 °C during 45 mn presents a
good cristallinity, high grain size and its band gap is close to 1.1 eV.

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