Accueil > Science et Technologie > Journal of New technology and Materials > Volume 04 > Numéro 02

I-V Characteristics Model For AlGaN/GaN HEMTs Using Tcad-Silvaco

Belkadi N., Djelloulib B., Douara A., Rabehi A., Ziane A.

We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 μm.