Influence of the edge effects on the MESFET transistor characteristics

A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, Our main aim in these sheet related on the one hand to the optimization of a two dimensional (2D) analytical model for the static characteristics of short gate-length GaAs MESFET‟s, this model takes into account the different physical specific phenomena of the device, and on the other hand to study the influence of the effect edge on the variation of some intrinsic elements (transconductance and drain conductance). The model suggested has enables to us to calculate and trace the different series from curves. The results obtained are well represented and interpreted.

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