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Investigation on chemical bath deposited CdS thin films

This paper presents the effect of solution temperature on optical, electrical and photoconducting properties of CdS films prepared by chemical deposition method. The solution temperatures used varied between 55 and 75 °C. X-ray diffraction
analysis showed that the prepared films have an hexagonal structure with (002) reflection. The transmittance data analysis showed a high transmission coefficient in visible range (85%) and an optical band gap lying between 2 and 2.4 eV. Scanning electron microscopy (SEM) and electrical measurements showed a pronounced effect of the solution temperature on thickness, dark conductivity and photoconductivity to dark conductivity ratio (σphot/σdark) parameters. The evolution of such parameters as a function of temperature are presented and discussed. It was found that the (σphot/σdark) ratio reaches high values of the order of 104 and 105 at 55 and 65 °C, respectively. These results indicate that CdS thin films prepared at these temperatures are convenient for optoelectronic and photovoltaic applications.


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