Accueil > Science et Technologie > Journal of New technology and Materials > Volume 01 > Numero 00

Numerical analysis of GaAs MESFETs OPFET

Azizi C. , Hamma I. , Saidi Y. , Zaabat M.

A Tow dimensional numerical model of channel potential for GaAs MESFET (Metal semiconductor field effect transistor)doped uniformly .the model takes into acount the effects in channel region considering both the photoconductive effect and photovoltaic effect at the gate schottky . the 2-D potential distribution function in the active layer of the divice is solved numerically under dark and illumination condition.