Accueil > Science et Technologie > Journal of New technology and Materials > Volume 01 > Numero 00

Spin polarized transport in semiconductor

In this paper, we study two-dimensional spin polarized transport in semiconductors. Based on the some semiclassical considerations and taking account of the spin relaxation. We determined the relationship of the polarization as a function of
time and the distance. And we have also established the relationship of the drain current in a 2D channel of a transistor called « spin-FET » where it was matter to highlight this type of transport. This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor.