http://www.webreview.dz/ Webreview est un site fédérateur des revues scientifiques. Il met à la disposition des utilisateurs un ensemble de revues scientifiques algériennes couvrant tous les domaines. Webreview est ouvert à toute revue désireuse de publier son contenu en ligne soit en mode d'accès complet ou restreint permettant ainsi la valorisation de la recherche scientifique en Algérie. Webreview et un projet développé par le CERIST au sein de la Division Recherche et Développement en Sciences de l'Information. Pour contacter Webreview par émail : webreview@mail.cerist.dz Pour contacter Webreview par courrier, fax ou téléphone : Centre de Recherche sur l'Information Scientifique et Technique (CERIST) Rue des 03 frères AISSOU, Ben-Aknoun, Alger, Algérie Tél/Fax : +(213)(0) 21.91.21.98 fr SPIP - www.spip.net http://www.webreview.dz/spip.php?article2097 http://www.webreview.dz/spip.php?article2097 2015-02-15T09:42:46Z text/html fr Azizi Ch., Mellal S., Zaabat M., Ziar T. MESFET Two-dimensional modeling Edge effects Characteristics (I-V, Gm, Gd) <p>A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, Our main aim in these sheet related on the one hand to the optimization of a two dimensional (2D) analytical model for the static characteristics of short gate-length GaAs MESFET‟s, this model takes into account the different physical specific phenomena of the device, and on the other hand to study the influence of the effect edge on the variation of some intrinsic elements (...)</p> - <a href="http://www.webreview.dz/spip.php?rubrique387" rel="directory">Numéro 02</a> / <a href="http://www.webreview.dz/spip.php?mot8271" rel="tag">MESFET</a>, <a href="http://www.webreview.dz/spip.php?mot8272" rel="tag">Two-dimensional modeling</a>, <a href="http://www.webreview.dz/spip.php?mot8273" rel="tag">Edge effects</a>, <a href="http://www.webreview.dz/spip.php?mot8274" rel="tag">Characteristics (I-V, Gm, Gd)</a> <div class='rss_chapo'><p>A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, Our main aim in these sheet related on the one hand to the optimization of a two dimensional (2D) analytical model for the static characteristics of short gate-length GaAs MESFET‟s, this model takes into account the different physical specific phenomena of the device, and on the other hand to study the influence of the effect edge on the variation of some intrinsic elements (transconductance and drain conductance). The model suggested has enables to us to calculate and trace the different series from curves. The results obtained are well represented and interpreted.</p></div>