A new drain current I–V model for MESFET with submicron gate

Azizi C., Azizi M. — 2015-03-10T13:37:51Z

In this work we present a new nonlinear approach for the calculation of the static characteristics of MESFET GaAs with submicron gate. First, we compare the results of the numerical simulations of the three main models for the MESFETs with submicron gate : Ahmed [1], Islam [2] and Memon [3] with experimental results. Then we propose a new approach that takes into account the surface states of the Schottky junction through a new mobility law for the determination of the output (...)

- Numéro 01 / MESFET, GaAs, nonlinear models, interface states, submicron gate

A comprehensive nonlinear model for GaAs MESFET transistor

Azizi C., Azizi M., Kaddour C., Mellal S., Zaabat M., Ziar T. — 2015-02-24T10:17:34Z

An analytical two-dimensional (2D) model to accurately predict the channel potential and electric field distribution in sub-micron GaAs MESFET based on (2D) analytical solution of Poisson's equation using superposition principle is presented. The results so obtained for current voltage characteristics, Transconductance and drain conductance, are presented and validated against both experimental I-V curves and various Models of the submicron MESFET GaAs. The model is then extended to predict (...)

- Numéro 01 / MESFET- GaAs, Submicrom nonlinear model, comparative study

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A new drain current I–V model for MESFET with submicron gate

A comprehensive nonlinear model for GaAs MESFET transistor