WEBREVIEW
Accueil > Volume4 > Volume4

Volume4

Articles de cette rubrique


I-V Characteristics Model For AlGaN/GaN HEMTs Using Tcad-Silvaco

We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 μm.



| info visites 7937915

Suivre la vie du site fr  Suivre la vie du site Volume4   ?

Creative Commons License