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Temperature effect on the vibration characteristics of carbon nanotubes

In this work, the thermal buckling properties of carbon nanotube with small scale effect are studied. Based on the nonlocal continuum theory and the Timoshenko beam model, the governing equation is derived and the critical buckling temperature is presented. The influences of the scale coefficients, the ratio of the length to the diameter, the transverse shear deformation and rotary inertia are discussed. It can be observed that the small scale effects are significant and should be considered for thermal analysis of carbon nanotube. The critical buckling temperature becomes higher with the ratio of length to the diameter increasing. Furthermore, for smaller ratios of the length to the diameter and higher mode numbers, the transverse shear deformation and rotary inertia have remarkable influences on the thermal buckling behaviors.

Structural and magnetic properties of electrodeposited NiFe alloy on silicon nanowires.

Perpendicular Silicon nanowires (SiNWs), having 20 micrometer in length, were fabricated by metal assisted chemical etching of n-type Si(100) wafers in aqueous HF-solution. In a second step, NiFe films were electrodeposited onto theses SiNWs. The structure and magnetic properties of as deposited NiFe layers were studied by X ray diffraction (XRD) and vibrating sample magnetometer (VSM). From X-ray diffraction, the FCC NiFe structure was evidenced with a lattice constant, a, equal to 3.5270 Å. From hysteresis curves, we compute the coercive field, Hc, values. We found that the Hc // values range from 102 Oe to 236 Oe.

The study of the miniaturisation effect on the characteristics of patch antenna using the WCIP method

The demand of miniature electronic systems has been increasing for several decades. The physical size of systems is reduced due to advancements in integrated circuits. With reduction in size of electronic systems, there is also an increasing demand of small and low cost antennas. Patch antennas are one of the most attractive antennas for integrated RF systems due to their compatibility with microwave integrated circuits. In this paper, the effects of substrate dielectric constant and particularly the miniaturization of the antenna size on the return loss characteristics of patch micro strip antenna (MSPA) have been investigated using the wave concept iterative procedure (WCIP) method. Accuracy of the present results is compared with previous work which has been done theoretically and experimentally.

Morphological and optical properties of sol-gel derived Ni doped ZnO thin film

In this work, we are interested in thin films of zinc oxide doped with nickel (Ni), deposited on glass substrates and elaborated by the sol-gel dip coating technique. The effects of the doping concentration in the range of outlet (1%, 3% and 5at%) have been thoroughly studied. The morphological properties of ZnO-Ni films were studied by Atomic Force Microscopy (AFM). The optical properties of the ZnO:Ni thin films were examined by UV-visible spectroscopy and the Tauc method was used to estimate the optical band gap and hall effect for electrical characteristique. Atomic Force Microscopy has indicated that the surface of the ZnO:Ni thin films have uniform and dense ZnO grains. The optical transmittance of ZnO:Ni thin films increased from 86 to about 93% from pure ZnO films to ZnO film doped with 3 wt% Ni and then decreased for 5 wt% Ni, and the optical band gap from 3.297 eV to 3.23eV. The electrical characterization performed using the technique of hall effect, gave a maximum electrical conductivity of 9.3 10-3(Ω.Cm)-1 obtained for the film doped with 3%Ni.

Effect of Al doping on the properties of electrodeposited ZnO nanostructures

In this study, Al-doped zinc oxide (AZO) nanostructures are prepared on polycrystalline fluorine-doped tin oxide (FTO)-coated conducting glass substrates from nitrates baths by the electrodeposition process at 70 °C. The electrochemical, morphological, structural and optical properties of the AZO nanostructures were investigated in terms of different Al concentration in the starting solution. It was found from the Mott–Schottky (M-S) plot that the carrier density of AZO nanostructures varied between 3.111020 to 5.561020 cm-3 when the Al concentration was between 0 and 5 mM. Atomic force microscopie (FM) images reveal that the concentration of Al has a very significant influence on the surface morphology and roughness of AZO thin films. X-ray diffraction (XRD) patterns demonstrate preferential (002) crystallographic orientation having c-axis perpendicular to the surface of the substrate and average crystallites size of the films was about 23–36 nm. As compared to pure ZnO, Al-doped ZnO exhibited lower crystallinity and there is a shift in the (002) diffraction peak to higher angles. ZnO nanostructures were found to be highly transparent and had an average transmittance of 80 % in the visible range of the spectrum. After the incorporation of Al content into ZnO the average transmittance increased and the band-gap tuning was also achieved (from 3.22 to 3.47 eV).

Numerical simulation of radiation damage on the device performance of GaAs MESFETs

In this work, the effect of the radiation on the current-voltage characteristics of device GaAs metal Schottky field effect transistors (MESFET) at room temperature is investigated. Numerical Simulation tuned by means of a physics based device simulator. When the substrate of this transistor is subjected to radiations, structural defects, which are created, have undesirable effects and can degrade the performance of the transistors. These defects appear like deep traps. Results showed that in the presence of donor traps the current-voltage characteristics increases. However, acceptor traps have a significant effect on the current-voltage characteristics. In the presence of acceptor traps, the space charge zone in the channel increases, hence, reduces the current drain.

Effect of a buffer layer on the Performance of Thin-film Cu(In,Ga)Se2 Solar Cells

Copper indium gallium diselenide (CuIn1-xGaxSe2 or CIGSe) solar cells has been considered to be one of the most promising thin-film solar cells and is important for terrestrial applications because of their high efficiency, long-term stable performance and potential for low-cost production. In this work, the CIGS heterojunction solar cell has been numerically simulated using SCAPS-1D tool. We study the influence of a buffer layer on the performance of the CIGSe solar cells. Quantum efficiency, Jsc ,Voc and efficiency has been calculated in different buffer layer materials (CdS, ZnS, ZnSe, InS).The solar cell optimized shows an efficiency of > 18% under the AM1.5G spectrum and one sun.

Fabrication, structural and optical characterization of In doped ZnO thin films prepared by the colloidal method

Regarding to the excellent conductivity and high transparency in the visible range, the zinc oxide (ZnO) films have been widely used as transparent electrodes in optoelectronic devices, ZnO is a direct wide band-gap (3.37 eV) semiconductor.
The conductivity of ZnO will be largely enhanced by doping little In, but it still keeps high transparency. So, IZO film has been widely investigated and is considered to be a promising possible alternative to ITO films.
This work consist to the fabrication and characterization of ZnO:In thin films. The sample preparation was carried out by the colloidal method. The pure and In doped ZnO thin films were deposited using a dip-coating technique on glass matrix. The optimal condition for samples fabrication has been investigated. The XRD and Raman characterizations show that the ZnO thin film crystallize with a wurtzite structure. The optical properties of ZnO thin films doped In reveal that doping changes the optical gap of ZnO.

Channel drop filter based on coupled cavity in photonic crystals

In this paper, a five channel drop filter has been designed in a two dimensional photonic crystal with high dielectric rods in air. Each channel consists of a photonic crystal coupled cavity waveguide with double cavities combined with a line defect waveguide. Desired wavelengths are selected by setting different radii of the two point defects in the photonic crystal coupled cavity waveguides. Defect rods placed at the same channel have an identical radius. The performance of the designed filter has been numerically calculated using the finite difference time domain method. In the designed structure, higher efficiencies in all channels have been achieved.

Copper oxide thin films deposition by spray pyrolysis

CuO thin films have been growth on to heated glass substrates by varying substrate temperatures from 280 to 400°C. The effect of the pyrolysis on structural, optical and electrical proprieties of CuO films has been investigated in the present work. Phase analysis was carried out using Micro-Raman scattering. The optical properties were studied by mean of UV–visible and near infrared spectroscopy. The conductivity was measured by the electrical D.C transport. The structural analysis indicates the presence of a single CuO phase with a monoclinic structure. The optical transmittance spectra show a high absorption of all films in the visible region. The electrical characterization indicates a maximal electrical conductivity of 1,03 × 10-6 (Ω .cm)-1.

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